Die power structure

ABSTRACT

A die including a first set of power tiles arranged in a first array and having a first voltage; a second set of power tiles arranged in a second array offset from the first array and having a second voltage; a set of power mesh segments enclosed by the second set of power tiles and having the first voltage; a first power rail passing underneath the set of power mesh segments and the first set of power tiles; and a set of vias operatively connecting the power rail with the set of power mesh segments and the first plurality of power tiles.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation-in-part (CIP) of U.S. patentapplication Ser. No. 12/646,806, filed on Dec. 23, 2009, and entitled:“Combined Power Mesh Transition and Signal Overpass/Underpass”.Accordingly, the present application claims benefit of U.S. patentapplication Ser. No. 12/646,806 under 35 U.S.C. §120. U.S. patentapplication Ser. No. 12/646,806 is hereby incorporated by reference inits entirety.

BACKGROUND

The quality of the distribution of power within a semiconductor deviceimpacts the performance of the semiconductor device in terms offrequency and power. The frequency of the semiconductor device isdetermined by the worst case transient droop seen by a circuit when itswitches. The active power dissipation is determined by the square ofthe voltage that the circuit recovers to after the switching hasstopped.

SUMMARY

In general, in one aspect, the invention relates to a die. The diecomprises: a first plurality of power tiles arranged in a first arrayand having a first voltage; a second plurality of power tiles arrangedin a second array offset from the first array and having a secondvoltage; a first plurality of power mesh segments enclosed by the secondplurality of power tiles and having the first voltage; a first powerrail passing underneath the first plurality of power mesh segments andthe first plurality of power tiles; and a first plurality of viasoperatively connecting the first power rail with the first plurality ofpower mesh segments and the first plurality of power tiles.

In general, in one aspect, the invention relates to a method ofoperating a die. The method comprises: comprising: distributing a firstpower signal having a first voltage across a first plurality of powertiles arranged in a first array and a first plurality of mesh segments;distributing a second power signal having a second voltage across asecond plurality of power tiles arranged in a second array and a secondplurality of mesh segments, wherein the first plurality of power tilesencloses the second plurality of mesh segments, wherein the secondplurality of power tiles encloses the first plurality of mesh segments,and wherein the first array and the second array are offset on the die;and propagating the first power signal to a first power rail operativelyconnected to the first plurality of power tiles and the first pluralityof mesh segments by a first plurality of vias.

In general, in one aspect, the invention relates to a method ofmanufacturing a die. The method comprises: generating a M12 layer of thedie comprising a first plurality of power tiles arranged in a firstarray, a second plurality of power tiles arranged in a second arrayoffset from the first array, and a first plurality of mesh segmentsenclosed by the second plurality of power tiles; generating a M13 layerof the die comprising a first bump and a full-dense-mesh (FDM)operatively connected to the first plurality of mesh segments by a firstplurality of vias; and generating a M11 layer of the die comprising afirst power rail operatively connected to the first plurality of powertiles and the first plurality of mesh segments by a second plurality ofvias, wherein the first plurality of power tiles, the first plurality ofmesh segments, the first power rail, and the first bump are configuredto have a first voltage, and wherein the second plurality of tiles areconfigured to have a second voltage.

Other aspects of the invention will be apparent from the followingdescription and the appended claims.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 shows a computer system in accordance with one or moreembodiments of the invention.

FIG. 2 shows a printed circuit board (PCB) in accordance with one ormore embodiments of the invention.

FIG. 3 shows the top layer of a die in accordance with one or moreembodiments of the invention.

FIG. 4A and FIG. 4B show the top-1 and top-2 layers of the die inaccordance with one or more embodiments of the invention.

FIG. 5 shows a cross-sectional model and a transistor model of the diein accordance with one or more embodiments of the invention.

FIG. 6 and FIG. 7 show flowcharts in accordance with one or moreembodiments of the invention.

DETAILED DESCRIPTION

Specific embodiments of the invention will now be described in detailwith reference to the accompanying figures. Like elements in the variousfigures are denoted by like reference numerals for consistency.

In the following detailed description of embodiments of the invention,numerous specific details are set forth in order to provide a morethorough understanding of the invention. However, it will be apparent toone of ordinary skill in the art that the invention may be practicedwithout these specific details.

In other instances, well-known features have not been described indetail to avoid unnecessarily complicating the description.

In general, embodiments of the invention provide a die, a method foroperating the die, and/or a method for manufacturing the die.Specifically, the die includes at least a M13 (i.e., top) layer, a M12(i.e., top-1) layer, and an M11 (i.e. top-2) layer. The M12 layer hasVDD power tiles arranged in an array and enclosing VSS mesh segments.The M12 layer also has VSS power tiles arranged in an array andenclosing VDD mesh segments. The two arrays are offset and separated bya zipper structure which cuts across the M13 and M12 layers. The M11 mayhave at least one VDD power rail that passes underneath some of the VDDpower tiles and some of the VDD mesh segments. The M11 may also have atleast one VSS power rail that passes underneath some of the VSS powertiles and some of the VSS mesh segments. This configuration allows foradditional vias to operatively connect the power rails of the M11 layerwith the power tiles and mesh segments of the M12 layer, resulting in areduced vertical resistance in the die's power structure.

FIG. 1 shows a computer system (100) in accordance with one or moreembodiments of the invention. The computer system (100) includes inputdevices (110), an output device (120), and a mechanical chassis (130).The mechanical chassis (130) includes a printed circuit board (PCB), anetwork device, and a storage device (not shown). The computer system(100) may correspond to a desktop personal computer (PC), a laptop, aserver, a mainframe, a smart phone, a kiosk, a personal digitalassistant (PDA), a printer, a cable box, or any other hardware device.

FIG. 2 shows a PCB (200) in accordance with one or more embodiments ofthe invention. The PCB (200) may be included in the system (100),discussed above in reference to FIG. 1. The PCB (200) has one or moresemiconductor devices (e.g., semiconductor device (210)). Moreover, thesemiconductor device (210) includes one or more semiconductor die (220)encapsulated in a mechanical package (230). The mechanical package (230)serves as an electrical and mechanical interface between the die (220)and the PCB (200).

In one or more embodiments of the invention, the PCB (200) provides oneor more external signals to the semiconductor device (210). Themechanical package (230) provides the external signals to the die (220).The die (220) is comprised of a plurality of metal layers and asemiconductor layer. The die (220) generates one or more internalsignals that are a function of the provided external signals.

FIG. 3 shows a portion of the top layer (i.e., M13 layer) (300) of thedie (220) in accordance with one or more embodiment. As shown in FIG. 3,the top layer (300) is partitioned into multiple regions by one or morezipper structures (e.g., zipper structure A (320), zipper structure B(322)). The zipper structures (320, 322) may cut across the top andtop-1 (i.e., M13 and M12) layers of the die (220). Each region includesa bump (e.g., VSS Bump A (302), VDD Bump A (304), VSS Bump B (306), VDDBump B (308)), a full-dense-mesh (FDM) (e.g., FDM A (352), FDM B (354),FDM C (356), FDM D (358)), and a pad (e.g., VSS Pad A (312), VDD Pad A(314), VSS Pad B (316), VDD Pad B (318)) operatively connecting the bump(302, 304, 306, 308) with the corresponding FDM (352, 354, 356, 358).Those skilled in the art, having the benefit of this detaileddescription, will appreciate that the bumps (302, 304, 306, 308), pads(312, 314, 316, 318), and FDMs (352, 354, 356, 358) are part of thedie's power structure and responsible for distributing VDD and VSS powersignals to/from components attached to the bumps (302, 304, 306, 308).In one or more embodiments of the invention, the bumps (302, 304, 306,308), pads (312, 314, 316, 318), and the FDMs (352, 354, 356, 358) arecomposed primarily of aluminum or aluminum alloys.

Still referring to FIG. 3, the VDD bumps (304, 308) and VSS bumps (302,306) are alternately stacked in offset columns and rows. Moreover, thedistance between the bumps in a row or column is referred to as the bumppitch (399). In each region, the voltage polarity of the pad and the FDMmatches the voltage polarity of the corresponding bump. Accordingly, FDMA (352) and FDM C (356) are VSS, while FDM B (354) and FDM D (358) areVDD.

In one or more embodiments of the invention, FDM A (352), FDM B (354),

FDM C (356), and FDM D (358) may be considered a single FDM with breakscreated by the zipper structure(s) (320, 322). The zipper structures(320, 322) may carry/propagate additional signals (e.g., clock signals,auxiliary power signals, etc.) (not shown). In one or more embodimentsof the invention, the zipper structures (320, 322) are the same as thezipper structures described in U.S. patent application Ser. No.12/646,806, filed on Dec. 23, 2009, and entitled: “Combined Power MeshTransition and Signal Overpass/Underpass”. As mentioned above, U.S.patent application Ser. No. 12/646,806 is incorporated by reference inits entirety.

FIG. 4A shows a portion of the top-1 layer (i.e., M12 layer) and thetop-2 (i.e., M11 layer) of the die (220) in accordance with one or moreembodiments of the invention. As shown in FIG. 4A, the top-1 layer(i.e., M12 layer) of the die (220) is partitioned into multiple regionsseparated by one or more zipper structures (i.e., Zipper Structure A(320), Zipper Structure Y (414)). As discussed above, the zipperstructures (320, 414) cut through both the top and top-1 (i.e., M13 andM12) layers of the die (220). As also shown in FIG. 4A, each regionincludes an array (e.g., Array A (402), Array B1 (404), Array C (406))having multiple power tiles enclosing multiple mesh segments. In otherwords, the multiple power tiles and multiple mesh segments are arrangedin arrays. In one or more embodiments of the invention, the arrays arecomposed primarily of copper or copper alloys.

In one or more embodiments of the invention, all the power tiles in anarray are of the same voltage polarity, while all the mesh segments inthe array are of a different voltage polarity. Further, the voltagepolarity of the mesh segments matches the voltage polarity of the FDM inthe layer above the array (i.e., FDM in the top layer). Further still,there exists vias (i.e., vertical interlayer connections) operativelyconnecting the mesh segments with the FDM in the layer above the array.

For example, array A (402) includes power tile A (420) and mesh segmentA (432). All power tiles in array A (402), including power tile A (420),have VDD polarity. All mesh segments in array A (402), including meshsegment A (432), have VSS polarity. Further, array A (402) is below FDMA (352) in the top layer, discussed above in reference to FIG. 3, andthus the mesh segments of array A (402) have the same voltage polarityas FDM A (352): VSS. Further still, as shown in FIG. 4A, there existsvias (VIAS₁₂) operatively connecting the mesh segments of array A (402)with FDM A (352).

As yet another example, array B1 (404) includes power tile B (422) andmesh segment B (434). All power tiles in array B1 (404), including powertile B (422), have VSS polarity. All mesh segments in array B1 (404),including mesh segment B1 (434), have VDD polarity. Further, array B1(404) is below FDM D (358) in the top layer, discussed above inreference to FIG. 3, and thus the mesh segments of array B1 (404) havethe same voltage polarity as FDM D (358): VDD. Further still, as shownin FIG. 4B, there exists vias (VIAS₁₂) operatively connecting the meshsegments of array B1 (404) with FDM D (358).

In one or more embodiments of the invention, zipper structure A (320)operatively connects the power tiles of array A (402) and array B (404)with the FDM of the same voltage polarity in the top layer. In otherwords, zipper structure A (320) operatively connects the power tiles ofarray A (402) with FDM D (358), discussed above in reference to FIG. 3.Both the power tiles of array A (402) and FDM D (358) have the samevoltage polarity: VDD. Similarly, zipper structure A (320) alsooperatively connects the power tiles of array B (404) with FDM A (352).Both the power tiles of array B (404) and FDM A (352) have the samevoltage polarity: VSS.

Still referring to FIG. 4A, there exists one or more power rails (e.g.,VDD Power Rail A (488), VDD Power Rail B (489), VSS Power Rail A (490),VSS Power Rail B (491)) passing underneath the arrays (402, 404, 406).In other words, the power rails (488, 489, 490, 491) are part of thetop-2 layer (i.e., M11 layer) located beneath the top-1 layer (i.e., M12layer).

As shown in FIG. 4A, there exists vias (VIAS₁) operatively connectingsome power tiles of array A (402) with VDD power rail A (488) and VDDpower rail B (489), and there exists vias (VIAS₁₁) operativelyconnecting some power tiles of array C (406) with VDD power rail A (488)and VDD power rail B (489).

As also shown in FIG. 4A, there exists vias (VIAS₁) operativelyconnecting some mesh segments of array A (402) with VSS power rail A(490) and VSS power rail B (491), and there exists some vias (VIAS₁₁)operatively connecting the mesh segments of array C (406) with VSS powerrail A (490) and VSS power rail B (491).

However, still referring to FIG. 4A, there are no vias connecting theVDD power rails (488, 489) with array B1 (404). Although, as shown inFIG. 4A, the VDD power rails (488, 489) do pass underneath array B1(404), the VDD power rails (488, 489) pass underneath the power tiles ofarray B1 (404), which have a different voltage polarity (i.e., VSS) thanthe VDD power rails (488, 489). As a result, the maximum inter-viadistance (469) among the vias operatively connecting the VDD power rails(488, 489) to the top-1 layer (i.e., M12 layer) equals or exceeds thebump pitch (e.g., bump pitch (399), discussed above in reference to FIG.3).

FIG. 4B shows a portion of the top-1 layer (i.e., M12 layer) and thetop-2 (i.e., M11 layer) of the die (220) in accordance with one or moreembodiments of the invention. FIG. 4B is similar to FIG. 4A. In otherwords, the top-1 layer (i.e., M12 layer) of the die is partitioned intomultiple regions separated by one or more zipper structures (i.e.,Zipper Structure A (320), Zipper Structure Y (414)). Further, eachregion includes an array (e.g., Array A (402), Array B2 (408), Array C(406)) having multiple power tiles enclosing multiple mesh segments.Further still, the top-2 layer (i.e., M11) layer includes multiple powerrails (488, 489, 490, 491) operatively connected to some of the powertiles and the mesh segments in the top-1 layer (i.e., M12 layer) byvias.

Array B2 (408) is similar to array B1 (404), discussed above inreference to FIG. 4A. However, as shown in FIG. 4B and unlike FIG. 4A,array B2 (408) is offset from array A (402). Array B2 (408) is alsooffset from array C (406). In other words, the borders (i.e., edges) ofthe power tiles and/or mesh segments in array A (402) and array C (406)do not line up with the borders (i.e., edges) of the power tiles/meshsegments in array B2 (408). This is in contrast to FIG. 4A, where theborders (i.e., edges) of the power tiles/mesh segments in all arrays(i.e., array A (402), array B1 (404), array C (406)) were aligned.

Still referring to FIG. 4B, because of the offset, it is now possible toconnect the VDD power rails (488, 489) to array B2 (408). In otherwords, there now exists vias (460) connecting the VDD power rails (488,489) to array B2 (408). These new vias (460), made possible by theoffset, reduce the maximum inter-via distance (468) among the vias to avalue less than the bump pitch (e.g., tile pitch). Further, because ofthe offset, additional vias (459) may be used to connect the VSS powerrails (490, 491) to array B2 (408). These new vias (460) and/oradditional vias (459) decrease the distance any signal must travel onthe power rails, effectively reducing the overall resistance between thetop-1 layer and the top-2 layer (i.e., M12 layer and M11 layer).

Although FIG. 4B shows the arrays (402, 406, 408) as vertically arrangedand the power rails (488, 489, 490, 491) as being vertical straightlines, those skilled in the art, having the benefit of this detaileddescription, will appreciate that the arrays (402, 406, 408) may behorizontally arranged with the power rails (488, 489, 490, 491) beinghorizontal straight lines. Moreover, there may be more power rails thanthe number of power rails shown in FIG. 4B.

Further, although FIG. 4B shows array A (402) and array C (406) havingVDD power tiles, while array B2 (408) has VSS power tiles, those skilledin the art, having the benefit of this detailed description, willappreciate that array B2 (408) may have VDD power tiles, and array A(402) and array C (406) may have VSS power tiles. In such embodiments ofthe inventions, the voltage polarities of the power rails (488, 489,490, 491) would need to reverse (i.e., VSS to VDD and VDD to VSS) toaccommodate the voltage polarity of the power tiles in the arrays (402,404, 408).

FIG. 5 shows a cross-sectional model (502) of the die and a transistormodel (504) of the die in accordance with one or more embodiments of theinvention. Those skilled in the art, having the benefit of this detaileddescription, will appreciate that other cross-sectional models andtransistor models for the die exist.

As shown in FIG. 5, the cross-sectional model (502) includes a bump(506), the M13 layer (508), the M12 layer (512), and the M11 layer(516). The cross-sectional model (502) also shows multiple vias (i.e.,V12 (510)) connecting the M13 layer and the M12 layer, and multiple vias(i.e., V11 (514)) connecting the M11 layer and the M12 layer.

As also shown in FIG. 5, the transistor model (504) includes atransistor (530), the bump (506), and multiple resistors (i.e., RM13(520), RM12 (524), RM11 (528)) representing the resistances of thevarious layers. Further, the transistor model (504) also includesmultiple resistors (i.e., RV12 (522), RV11 (526)) representing theresistances of the vias connecting the layers.

As discussed above, by offsetting the arrays in the M12 layer, itbecomes possible to increase the number of vias connecting the M12 layerand the M11 layer (i.e., power rails), and decrease the maximuminter-via distance to a value less than the bump pitch. This correspondsto reducing the distance current must travel on the M11 layer (i.e.,power rails), which is beneficial since RM12<RM11. Moreover, thisreduces the overall resistance between M12 and M11, and helps ensure thevoltage at the terminal of the transistor (530) (i.e., V_(A)) will besufficiently large for the transistor (and thus die) to operatecorrectly.

FIG. 6 shows a flowchart in accordance with one or more embodiments ofthe invention. The process shown in FIG. 6 may be used to operate a die(i.e., the die shown in any of FIGS. 1-5). One or more steps in FIG. 6may be repeated, omitted, and/or performed in a different order. One ormore steps in FIG. 6 may be performed in parallel.

Initially, VDD power signals and VSS power signals are injected into thebumps of the die and distributed by the corresponding FDM (STEP 602). Asdiscussed above, the top layer (i.e., M13 layer) may have multipleregions caused by zipper structures, and each region includes a bump, aFDM, and a pad operatively connecting the bump and the FDM. It is theFDMs that distribute each power signal injected at the bump to the restof their respective region.

In STEP 604, the VDD power signals and VSS power signals are distributedacross power tiles and mesh segments in the top-1 (i.e., M12) layer ofthe die. As discussed above, the M12 layer includes both VDD and VSSpower tiles that are connected to the FDMs of the M13 layer by thezipper structures. In other words, the power tiles receive the VDD orVSS power signals from the M13 layer via the zipper structures. As alsodiscussed above, the M12 layer includes both VDD and VSS mesh segmentsthat are connected to the FDMs of the M13 layer by vias. In other words,the mesh segments receive the VSS or VDD power signals from the vias.

Within the M12 layer, the VDD power tiles enclose VSS mesh segments,while the VSS power tiles enclose VDD mesh segments. Further, the powertiles and mesh segments are arranged in arrays separated by the zipperstructures. Further still, adjacent arrays may be offset with respect toeach other so that the borders (i.e., edges) of the power tiles in theadjacent arrays do not align.

In STEP 606, the VDD and VSS power signals are propagated to the powerrails of the top-2 layer (i.e., M11 layer). As discussed above, VSSpower rails and VDD power rails pass underneath the power tiles and meshsegments. Connections between the power rails and the M12 layer areachieved by vias. In other words, the VDD and VSS power signals arepropagated to their respective power rails by the vias. As the arrays inthe M12 layer are offset, the maximum inter-via distance is a value lessthan the bump pitch. This reduces the distance the VDD and VSS signalsmust travel on the power rails before propagating to lower levels (M10,M9, . . . ) of the die.

FIG. 7 shows a flowchart in accordance with one or more embodiments ofthe invention. The process shown in FIG. 7 may be used to operate a die(i.e., the die shown in any of FIGS. 1-5). One or more steps in FIG. 7may be repeated, omitted, and/or performed in a different order. One ormore steps in FIG. 7 may be performed in parallel.

Initially, the top layer (i.e. M13 layer) of the die is generated (STEP702). As discussed above, the top layer has multiple regions created byzipper structures. Each region includes a bump, a pad, and a FDM. Thebump, the pad, and the FDM are configured to have the same voltagepolarity (i.e., VDD or VSS).

In STEP 704, the top-1 layer (i.e., M12 layer) of the die is generated.The top-1 layer includes both VDD and VSS power tiles that are connectedto the FDMs of the M13 layer by the zipper structures. As also discussedabove, the M12 layer includes both VDD and VSS mesh segments that areconnected to the FDMs of the M13 layer by vias.

Within the M12 layer, the VDD power tiles enclose VSS mesh segments,while the VSS power tiles enclose VDD mesh segments. Further, the powertiles and mesh segments are arranged in arrays separated by the zipperstructures. Further still, adjacent arrays may be offset with respect toeach other so that the borders (i.e., edges) of the power tiles in theadjacent arrays do not align.

In STEP 706, the top-2 layer (i.e., M11 layer) of the die is generated.The top-2 layer includes both VSS and VDD power rails. As discussedabove, the VSS power rails and VDD power rails pass underneath the powertiles and mesh segments of the top-1 layers. Connections between thepower rails and the M12 layer are achieved by vias. As the arrays in theM12 layer are offset, the maximum inter-via distance is a value lessthan the bump pitch. This reduces the distance the VDD and VSS signalsmust travel on the power rails before propagating to lower levels (M10,M9, . . . ) of the die.

While the invention has been described with respect to a limited numberof embodiments, those skilled in the art, having benefit of thisdisclosure, will appreciate that other embodiments can be devised whichdo not depart from the scope of the invention as disclosed herein.Accordingly, the scope of the invention should be limited only by theattached claims.

1.-9. (canceled)
 10. The method of operating a die, comprising:distributing a first power signal having a first voltage across a firstplurality of power tiles arranged in a first array and a first pluralityof mesh segments; distributing a second power signal having a secondvoltage across a second plurality of power tiles arranged in a secondarray and a second plurality of mesh segments, wherein the firstplurality of power tiles encloses the second plurality of mesh segments,wherein the second plurality of power tiles encloses the first pluralityof mesh segments, and wherein the first array and the second array areoffset on the die; and propagating the first power signal to a firstpower rail operatively connected to the first plurality of power tilesand the first plurality of mesh segments by a first plurality of vias.11. The method of claim 10, further comprising: propagating the secondpower signal to a second power rail operatively connected to the secondplurality of power tiles and the second plurality of mesh segments by asecond plurality of vias.
 12. The method of claim 11, furthercomprising: injecting the first power signal into the die using a firstbump above the second array and operatively connecting to the firstplurality of power tiles using a zipper structure; and injecting thesecond power signal into the die using a second bump above the firstarray and operatively connecting to the second plurality of power tilesusing the zipper structure.
 13. The method of claim 12, furthercomprising: distributing the first power signal across a full-dense-mesh(FDM) operatively connecting the first bump to the zipper structure. 14.The method of claim 13, wherein the FDM is in a M13 layer of the die,wherein the first plurality of power tiles and the second plurality ofpower tiles are in a M12 layer of the die, wherein the first pluralityof mesh segments and the second plurality of mesh segments are in theM12 layer, and wherein the first power rail and the second power railare in a M11 layer of the die below the M12 layer.
 15. The method ofclaim 12, further comprising: propagating a clock signal along thezipper structure.
 16. The method of claim 12, wherein the first bump andthe second bump are separated by a bump pitch, wherein the firstplurality of vias comprises a maximum inter-via distance, and whereinthe maximum inter-via distance is less than the bump pitch.
 17. A methodof manufacturing a die, comprising: generating a M12 layer of the diecomprising a first plurality of power tiles arranged in a first array, asecond plurality of power tiles arranged in a second array offset fromthe first array, and a first plurality of mesh segments enclosed by thesecond plurality of power tiles; generating a M13 layer of the diecomprising a first bump and a full-dense-mesh (FDM) operativelyconnected to the first plurality of mesh segments by a first pluralityof vias; and generating a M11 layer of the die comprising a first powerrail operatively connected to the first plurality of power tiles and thefirst plurality of mesh segments by a second plurality of vias, whereinthe first plurality of power tiles, the first plurality of meshsegments, the first power rail, and the first bump are configured tohave a first voltage, and wherein the second plurality of tiles areconfigured to have a second voltage.
 18. The method of claim 17, whereinthe M12 layer further comprises a second plurality of mesh segmentsenclosed by the first plurality of power tiles, wherein the M13 layerfurther comprises a second bump configured to have the second voltage,and wherein the M11 layer further comprises a second power railoperatively connected to the second plurality of mesh segments and thesecond plurality of power tiles by a third plurality of vias.
 19. Themethod of claim 18, wherein the first bump and the second bump areseparated by a bump pitch, wherein the second plurality of viascomprises a maximum inter-via distance, and wherein the maximuminter-via distance is less than the bump pitch.
 20. The method of claim17, wherein the FDM and the first plurality of power tiles areoperatively connected by a zipper structure, and wherein the zipperstructure is located between the first array and the second array.